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Atomic layer epitaxy of YBaCuO for optoelectronic applicationsAn MOCVD-based atomic-layer epitaxy process is being developed as a potential solution to the problems of film-thickness and interface-abruptness control which are encountered when fabricating superconductor-insulator-superconductor devices using YBa2Cu3O(7-x). In initial studies, the atomic-layer MOCVD process yields superconducting YBa2Cu3O(7-x) films with substrate temperatures of 605 C during film growth, and no postdeposition anneal. The low temperature process yields a smooth film surface and can reduce interface degradation due to diffusion.
Document ID
19920048908
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Skogman, R. A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Khan, M. A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Van Hove, J. M.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Bhattarai, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Boord, W. T.
(APA Optics, Inc. Minneapolis, MN, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1992
Subject Category
Solid-State Physics
Accession Number
92A31532
Funding Number(s)
CONTRACT_GRANT: NAS7-1094
Distribution Limits
Public
Copyright
Other

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