Vapor transport and crystal growth of GeSe under normal and high acceleration

Physical vapor transport experiments on GeSe in the presence of 2 atm xenon and for a nominal temperature difference of 600-500 C were performed under 1 g, 5 g, and 10 g acceleration conditions. Under high acceleration and destabilizing conditions, the GeSe crystals are generally larger than those under 1 g, stabilizing, and up to three orders of magnitude larger in surface area than those under 1 g, destabilizing conditions. The mass transport rates of the 5 g and 10 g destabilizing experiments are considerably greater than those of the 10 g, stabilizing, and 1 g experiments. The observed increase in mass flux (under destabilizing conditions) with acceleration is significantly greater than the anticipated dependence (mass flux proportional to g exp 1/4) for laminar, boundary-layer driven free convection. In view of the considerable convection under high acceleration, destabilizing conditions, the surface morphology and bulk crystallinity of the large crystal platelets are unexpectedly good.