Temperature dependence of the properties of DBR mirrors used in surface normal optoelectronic devices

The variation in the center wavelength of distributed Bragg reflectors used in optoelectronic devices, such as surface emitting lasers and Fabry-Perot modulators, is measured as the temperature of the mirrors changes over the range 25 C to 105 C. An analytic expression for the shift in center wavelength with temperature is presented. The mirrors measured are made of InP/InGaAsP, GaAs/AlAs, and Si/SiN(x). The linear shifts in center wavelength are 0.110 +/- 0.003 nm/C, 0.087 +/- 0.003 nm/C, and 0.067 +/- 0.007 nm/C for the InP/InGaAsP, GaAs/AlAs, and Si/SiN mirrors, respectively. Based on these data, the change in penetration depth with temperature is calculated.