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Stimulated electronic transition concept for an erasable optical memoryA new concept for an erasable optical memory is demonstrated using stimulated electronic transition (SET). Large bandgap semiconductors are suitable materials for the SET medium. The properties of MgS:Eu,Sm and SrS:Eu,Sm as possible media for the SET process are investigated. Quantum storage is achieved in the form of charges in deep levels in the medium and stimulated radiative recombination is used as the reading process. Unlike magneto-optic (M-O) and phase change (PC) processes, optical writing, reading and erasing are achieved without localized heating. The SET process will have an inherently faster data transfer rate and a higher storage density, and the medium will be more durable than the M-O and PC media. A possible application of the SET process in neural networks is also discussed.
Document ID
19920055426
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Albin, Sacharia
(NASA Langley Research Center Hampton, VA, United States)
Satira, James D.
(NASA Langley Research Center Hampton, VA, United States)
Livingston, David L.
(Old Dominion University Norfolk, VA, United States)
Shull, Thomas A.
(NASA Langley Research Center Hampton, VA, United States)
Date Acquired
August 15, 2013
Publication Date
February 1, 1992
Publication Information
Publication: Japanese Journal of Applied Physics, Part 1
Volume: 31
Issue: 2B F
ISSN: 0021-4922
Subject Category
Electronics And Electrical Engineering
Accession Number
92A38050
Funding Number(s)
CONTRACT_GRANT: NAS1-18584
Distribution Limits
Public
Copyright
Other

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