dc and microwave performance of a 0.1-micron gate InAs/In(0.52)Al(0.48)As MODFET

The performance characteristics of 0.1-micron gate InAs/In(0.52)Al(0.48)As MODFETs grown by molecular beam epitaxy are measured and analyzed. The transistors are characterized by measured g sub m (max) = 840 mS/mm, f sub T = 128 GHz, and a very high current carrying capability, e.g., I sub dss = 934 mA/mm at V sub gs = 0.4 V and V sub ds = 2.7 V. The value of f sub T is estimated from extrapolation of the current gain (H21) at a -6-dB/octave rolloff. This is the first report on the microwave characteristics of an InAs-channel MODFET and establishes the superiority of this heterostructure system.