Dependence of millimeter wave surface resistance on the deposition parameters of laser ablated YBa2Cu3O(x) thin filmsMeasurements of millimeter-wave surface resistance versus temperature have been performed for YBa2Cu3O(x) thin films on 100 line-type SrTiO(3) substrates using a TE(011) cylindrical copper cavity at 80 GHz. The 0.6-micron thick films were grown at several deposition temperatures in the range 690 C to 810 C by means of a pulsed excimer laser ablation technique. A surface resistance minimum (60 milliohm at 77 K) near 770 C is shown to correlate with a minimum in c-axis lattice parameter (11.72 A). The highest value of Tc also occurs near this temperature. The surface resistance of films deposited at 790 C on 110 line-type LaAlO3 subtrates is lower, reaching 8 milliohm at 98 GHz and 80 K, demonstrating the influence of substate material on film quality.
Document ID
19920061916
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Wosik, J. (NASA Lyndon B. Johnson Space Center Houston, TX, United States)
Robin, T. (NASA Lyndon B. Johnson Space Center Houston, TX, United States)
Davis, M. (NASA Lyndon B. Johnson Space Center Houston, TX, United States)
Wolfe, J. C. (NASA Lyndon B. Johnson Space Center Houston, TX, United States)
Forster, K. (NASA Lyndon B. Johnson Space Center Houston, TX, United States)
Deshmukh, S. (NASA Lyndon B. Johnson Space Center Houston, TX, United States)
Bensaoula, A. (NASA Lyndon B. Johnson Space Center Houston, TX, United States)
Sega, R. (NASA Lyndon B. Johnson Space Center Houston, TX, United States)
Economou, D. (NASA Lyndon B. Johnson Space Center Houston, TX, United States)
Ignatiev, A. (Houston, University TX, United States)