NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Current saturation in submillimeter wave varactorsIn semiconductor devices the speed of electrons cannot exceed certain limits. This phenomenon will affect varactor multipliers as well as other high frequency devices where the RF current through the active part of the device is primarily displacement current. Hence, 'saturation' of the varactor output power is expected at some point. This phenomenon is discussed in some detail and shown to severely deteriorate the multiplier performance at higher frequencies. Single barrier varactors should have an advantage over GaAs Schottky diode varactors because they can be fabricated on InAs and stacked in a series array, allowing for lower current densities and higher power handling.
Document ID
19920063449
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Kollberg, Erik L.
(Chalmers University of Technology, Goteborg, Sweden)
Tolmunen, T. J.
(Helsinki University of Technology, Espoo, Finland)
Frerking, Margaret A.
(JPL Pasadena, CA, United States)
East, Jack R.
(Michigan, University Ann Arbor, United States)
Date Acquired
August 15, 2013
Publication Date
May 1, 1992
Publication Information
Publication: IEEE Transactions on Microwave Theory and Techniques
Volume: 40
Issue: 5, Ma
ISSN: 0018-9480
Subject Category
Electronics And Electrical Engineering
Accession Number
92A46073
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available