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High-field transport properties of InAs(x)P(1-x)/InP (x = 0.3-1.0) modulation doped heterostructures at 300 and 77 KDetailed measurements at 300 and 77 K have been made of the high-field transport properties of pseudomorphic InAsP/InP modulation-doped heterostructures grown by low-pressure organometallic CVD. The high-field channel velocities are comparable to or better than that of InGaAs/InAlAs heterostructures, and the transport properties of InAs/InP heterostucture suggest that carriers remain confined in the channel even at high fields.
Document ID
19920063707
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Yang, D.
(NASA Lewis Research Center Cleveland, OH, United States)
Bhattacharya, P. K.
(Michigan, University Ann Arbor, United States)
Hong, W. P.
(NASA Lewis Research Center Cleveland, OH, United States)
Bhat, R.
(NASA Lewis Research Center Cleveland, OH, United States)
Hayes, J. R.
(Bell Communications Research, Inc. Red Bank, NJ, United States)
Date Acquired
August 15, 2013
Publication Date
July 1, 1992
Publication Information
Publication: Journal of Applied Physics
Volume: 72
Issue: 1 Ju
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
92A46331
Funding Number(s)
CONTRACT_GRANT: NAG3-988
Distribution Limits
Public
Copyright
Other

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