Photoluminescence lifetime measurements in InP wafersA simple apparatus to measure the minority carrier lifetime in InP has been developed. The technique stimulates the sample with a short pulse of light from a diode laser and measures the photoluminescence decay to extract the minority carrier lifetime. The photoluminescence lifetime in InP as a function of doping on both n- and p-type material is examined. The results also show a marked difference in the lifetime of n-type InP and p-type InP of similar doping levels. N-type InP shows a lifetime considerably longer than the expected radiative limited lifetime.
Document ID
19920065468
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Landis, Geoffrey A. (NASA Lewis Research Center Cleveland, OH, United States)
Jenkins, Phillip (NASA Lewis Research Center Cleveland, OH, United States)
Weinberg, Irving (NASA Lewis Research Center Cleveland, OH, United States)