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High figure-of-merit n-type SiGe/GaP alloysImprovements to the figure-of-merit of n-type SiGe have been achieved via a systematic anneal study aimed at determining the optimal P:Ga ratio. Figures-of-merit of 0.85 to 0.90 x 10-3K-1 have been routinely and reproducibly achieved starting with an initial P:Ga ratio of 3:1. These samples have carrier concentrations in excess of 4.0 x 1020/cu cm, the highest reported for SiGe. This value has been shown to be too high, resulting in unfavorably low Seebeck coefficients. The optimal carrier concentration has been shown to be 1.5-3.0 x 1020/cu cm. Thus, further improvements will be achieved by reductions in the P and Ga concentrations.
Document ID
19920068071
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Scoville, A. N.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Bajgar, Clara
(Thermo Electron Technologies Corp. Waltham, MA, United States)
Vandersande, Jan
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Fleurial, Jean-Pierre
(JPL Pasadena, CA, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Subject Category
Solid-State Physics
Meeting Information
Meeting: IECEC ''91: Intersociety Energy Conversion Engineering Conference
Location: Boston, MA
Country: United States
Start Date: August 4, 1991
End Date: August 9, 1991
Accession Number
92A50695
Distribution Limits
Public
Copyright
Other

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