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Enhancing optical absorption in InP and GaAs utilizing profile etchingThe current state of profile etching in GaAs and InP is summarized, including data on novel geometries attainable as a function of etchant temperature, composition, and rate; substrate orientation; carrier concentration; and oxide thickness between substrate and photoresist. V-grooved solar cells have been manufactured with both GaAs and InP, and the improved optical absorption demonstrated. Preferred parameters for various applications are listed and discussed.
Document ID
19920070530
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Bailey, Sheila G. (NASA Lewis Research Center Cleveland, OH, United States)
Fatemi, Navid S. (NASA Lewis Research Center Cleveland, OH, United States)
Landis, Geoffrey A. (Sverdrup Technology, Inc., Brook Park; NASA, Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Subject Category
Solid-State Physics
Meeting Information
Meeting: IEEE Photovoltaic Specialists Conference
Location: Las Vegas, NV
Country: United States
Start Date: October 7, 1991
End Date: October 11, 1991
Accession Number
92A53154
Distribution Limits
Public
Copyright
Other

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