High performance etchant for thinning p(+)-InP and its application to p(+)n InP solar cell fabricationAn etchant, namely (o-H3PO4)u: (HNO3)v: (H2O2)t: (H2O)1-(u+v+t) is developed for thinning, after contacting, the p(+) emitter layer of p(+)n InP structures made by thermal diffusion. Varying u, v, and t, reproducible etch rates of 5 to 110 nm/min are obtained. After thinning the 0.6- to 2.5-micron thick p(+) InP layer down to 60-250 nm, specular surfaces are obtained at up to 80 nm/min etch rate. Due to its intrinsic qualities the resisual P-rich oxide after thinning the emitter layer provides surface passivation of p(+) InP surfaces and can also serve as a first-layer AR coating.
Document ID
19920070531
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Faur, Maria (NASA Lewis Research Center Cleveland, OH, United States)
Faur, Mircea (Cleveland State University OH, United States)
Bailey, Sheila (NASA Lewis Research Center Cleveland, OH, United States)
Brinker, David (NASA Lewis Research Center Cleveland, OH, United States)
Goradia, Manju (Cleveland State University OH, United States)
Weinberg, Irving (NASA Lewis Research Center Cleveland, OH, United States)
Fatemi, Navid (NASA Lewis Research Center Cleveland, OH, United States)