Molecular dynamics investigation of radiation damage in semiconductorsResults of a molecular dynamics investigation of the effects of radiation damage on the crystallographic structure of semiconductors are reported. Particular cosiderastion is given to the formation of point defects and small defect complexes in silicon at the end of a radiation-damage cascade. The calculations described make use of the equivalent crystal theory of Smith and Banerjea (1988). Results on the existence of an atomic displacement threshold, the defect formation energy, and some crystallographic information on the defects observed are reported.
Document ID
19920070533
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Good, Brian S. (NASA Lewis Research Center Cleveland, OH, United States)