Evaluation of the minority carrier diffusion length and surface-recombination velocity in GaAs p/n solar cellsThe minority carrier diffusion length (Lp) and the surface recombination velocity (Vs) were measured as a function of distance (x) from the p-n junction in GaAs p/n concentrator solar cells. The measured Vs values were used in a theoretical expression for the normalized electron-beam-induced current. A fitting procedure was then used to fit this expression with experimental values to obtain Lp. The results show that both Vs and Lp vary with x. Lp measured in irradiated cells showed a marked reduction. These values were compared to those measured previously which did not account for Vs.
Document ID
19920070538
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Hakimzadeh, Roshanak (Sverdrup Technology, Inc., Brook Park; Case Western Reserve University Cleveland, OH, United States)
Moeller, Hans J. (Case Western Reserve University Cleveland, OH, United States)
Bailey, Sheila (NASA Lewis Research Center Cleveland, OH, United States)