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Effect of InAlAs window layer on the efficiency of indium phosphide solar cellsIndium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide-bandgap lattice-matched indium aluminum arsenide (In0.52Al0.48As) window layer on the performance of InP solar cells was investigated using a numerical code PC-1D. The p(+)n InP solar cell performance improves significantly with the use of a window layer. No improvement is seen for n(+)p InP cells. Cell results are explained by the band diagram of the heterostructure and the conduction-band energy discontinuity. The calculated I-V and internal quantum efficiency results clearly demonstrate that In0.52Al0.48As is a promising candidate as a window layer material for p(+)n InP solar cells.
Document ID
19920070539
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Jain, R. K.
(NASA Lewis Research Center Cleveland, OH, United States)
Landis, G. A.
(Sverdrup Technology, Inc. Brook Park, OH, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Subject Category
Energy Production And Conversion
Meeting Information
Meeting: IEEE Photovoltaic Specialists Conference
Location: Las Vegas, NV
Country: United States
Start Date: October 7, 1991
End Date: October 11, 1991
Accession Number
92A53163
Funding Number(s)
CONTRACT_GRANT: NAS3-25266
Distribution Limits
Public
Copyright
Other

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