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InP concentrator solar cellsThe design, fabrication, and characterization of high-performance, n(+)/p InP shallow-homojunction (SHJ) concentrator solar cells are described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy. A preliminary assessment of the effects of grid-collection distance and emitter-sheet resistance on cell performance is presented. At concentration ratios of around 100, cells with efficiencies of 21.4 percent AM0 (24.3 percent direct) at 25 C are fabricated. These are the highest efficiencies yet reported for single-junction InP solar cells. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined. Application of these results to other InP-based photovoltaic devices is discussed.
Document ID
19920070542
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Ward, J. S.
(NASA Lewis Research Center Cleveland, OH, United States)
Wanlass, M. W.
(NASA Lewis Research Center Cleveland, OH, United States)
Coutts, T. J.
(NASA Lewis Research Center Cleveland, OH, United States)
Emery, K. A.
(NASA Lewis Research Center Cleveland, OH, United States)
Osterwald, C. R.
(National Renewable Energy Laboratory Golden, CO, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Subject Category
Energy Production And Conversion
Meeting Information
Meeting: IEEE Photovoltaic Specialists Conference
Location: Las Vegas, NV
Country: United States
Start Date: October 7, 1991
End Date: October 11, 1991
Accession Number
92A53166
Funding Number(s)
CONTRACT_GRANT: NASA ORDER C-300005-K
CONTRACT_GRANT: DE-AC02-83HC-10093
Distribution Limits
Public
Copyright
Other

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