High voltage thermally diffused p(+)n solar cellsThe possibility of fabricating thermally diffused p(+)n InP solar-cells with high open-circuit voltage without sacrificing the short circuit current is discussed. The p(+)n InP junctions were formed by Cd and Zn diffusion through a 3-5-nm-thick anodic or chemical phosphorus-rich oxide cap layer grown on n:InP:S (with ND-NA = 3.5 x 10 exp 16 and 4.5 x 10 exp 17/cu cm) Czochralski LEC-grown substrates. After thinning the emitter from its initial thickness of 1 to 2.5 micron down to 0.06-0.15 micron, the maximum efficiency was found when the emitter was 0.2 to 0.3 micron thick. Typical AM0, 25 C values of 854-860 mV were achieved for Voc, Jsc values were from 25.9 to 29.1 mA/sq cm using only the P-rich passivating layer left after the thinning process as an antireflection coating.
Document ID
19920070548
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Faur, M. (NASA Lewis Research Center Cleveland, OH, United States)
Faur, M. (Cleveland State University OH, United States)
Flood, D. J. (NASA Lewis Research Center Cleveland, OH, United States)
Brinker, D. J. (NASA Lewis Research Center Cleveland, OH, United States)
Weinberg, I. (NASA Lewis Research Center Cleveland, OH, United States)
Goradia, C. (NASA Lewis Research Center Cleveland, OH, United States)
Fatemi, N. (NASA Lewis Research Center Cleveland, OH, United States)
Goradia, M. (NASA Lewis Research Center Cleveland, OH, United States)
Thesling, W. (Cleveland State University OH, United States)