Growth and properties of amorphous silicon films grown using pulsed-flow reactive plasma beam epitaxyThe growth and properties of a-Si:H films grown using a novel deposition technique, reactive plasma beam epitaxy, are discussed. In this technique, a remote H plasma produced in a microwave-ECR reactor is used to grow a-Si:H films at low pressures. The H ions react with SiH4 introduced near the substrate to produce the film. The flow of SiH4 is pulsed on or off, thereby achieving in-situ annealing of the film during growth by H ions and radicals. The films produced by this technique appear to have good electronic quality, and are more stable than the standard glow discharge films.
Document ID
19920070561
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Dalal, Vikram L. (NASA Headquarters Washington, DC United States)
Knox, Ralph (NASA Headquarters Washington, DC United States)
Kandalaft, Nabeeh (NASA Headquarters Washington, DC United States)
Baldwin, Greg (Iowa State University of Science and Technology, Ames, United States)