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Radiation and temperature effects in heteroepitaxial and homoepitaxial InP cellsHeteroepitaxial (InP/GaAs) and homo-epitaxial (InP/InP) cells were irradiated by 1-MeV electrons and their performance, temperature dependencies and carrier removal rates determined. The radiation resistances of the InP/GaAs cells were significantly higher than that of the InP/InP cells. This was attributed to the high dislocation density present in the heteroepitaxial cells. In addition, the effects of dislocations in these latter cells were dominant in determining the temperature dependence of open-circuit voltage.
Document ID
19920070568
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weinberg, I. (NASA Lewis Research Center Cleveland, OH, United States)
Curtis, H. B. (NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K. (NASA Lewis Research Center Cleveland, OH, United States)
Brinker, D. J. (NASA Lewis Research Center Cleveland, OH, United States)
Jenkins, P. P. (NASA Lewis Research Center Cleveland, OH, United States)
Faur, M. (Cleveland State University OH, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE Photovoltaic Specialists Conference
Location: Las Vegas, NV
Country: United States
Start Date: October 7, 1991
End Date: October 11, 1991
Accession Number
92A53192
Distribution Limits
Public
Copyright
Other

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