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Electron irradiation effects in epitaxial InP solar cellsPerformance data for InP-based solar cells after irradiation with 1-MeV electrons up to a fluence of 1 x 1016 e/cm2 are presented. Three InP cell structures are considered. Two of these have epitaxially grown active regions, these being a homojunction design and in ITO/InP structure. These are compared with ITO/InP cells without the epitaxial base region. The cell parameter variations, the influence of illumination during irradiation, and the effect on cell spectral response and capacitance measurements are discussed. Substantial performance recovery after thermal annealing at 90 C is reported.
Document ID
19920070589
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Pearsall, N. M. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Robson, N. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Sambell, A. J. (Newcastle Polytechnic Newcastle upon Tyne, United Kingdom)
Anspaugh, B. (JPL Pasadena, CA, United States)
Cross, T. A. (EEV, Ltd. Chelmsford, United Kingdom)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE Photovoltaic Specialists Conference
Location: Las Vegas, NV
Country: United States
Start Date: October 7, 1991
End Date: October 11, 1991
Accession Number
92A53213
Distribution Limits
Public
Copyright
Other

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