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Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiencyLow-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.
Document ID
19920071367
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Hoenk, Michael E.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, Paula J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, Frank J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Terhune, R. W.
(JPL Pasadena, CA, United States)
Fattahi, Masoud
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Tseng, Hsin-Fu
(EG&G Reticon Sunnyvale, CA, United States)
Date Acquired
August 15, 2013
Publication Date
August 31, 1992
Publication Information
Publication: Applied Physics Letters
Volume: 61
Issue: 9, Au
ISSN: 0003-6951
Subject Category
Electronics And Electrical Engineering
Accession Number
92A53991
Distribution Limits
Public
Copyright
Other

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