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Electrical-transport properties and microwave device performance of sputtered TlCaBaCuO superconducting thin filmsThe paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin films were investigated by designing, fabricating, and characterizing microstrip ring resonators with a fundamental resonance frequency of 12 GHz on 10-mil-thick LaAlO3 substrates. Typical unloaded quality factors for a ring resonator with a superconducting ground plane of 0.3 micron-thickness and a gold ground plane of 1-micron-thickness were above 1500 at 65 K. Typical values of penetration depth at 0 K in the TlCaBaCuO thin films were between 7000 and 8000 A.
Document ID
19920073975
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Subramanyam, G.
(NASA Lewis Research Center Cleveland, OH, United States)
Kapoor, V. J.
(Cincinnati, University OH, United States)
Chorey, C. M.
(Sverdrup Technology, Inc. Cleveland, OH, United States)
Bhasin, K. B.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 15, 2013
Publication Date
September 15, 1992
Publication Information
Publication: Journal of Applied Physics
Volume: 72
Issue: 6, Se
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
92A56599
Distribution Limits
Public
Copyright
Other

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