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Anodic etching of p-type cubic silicon carbidep-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA/sq cm. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm/s was obtained in a 1:1:50 HF:HCl:H2O electrolyte.
Document ID
19920074403
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1007/BF00695513
Authors
Harris, G. L. (NASA Lewis Research Center Cleveland, OH, United States)
Fekade, K. (NASA Lewis Research Center Cleveland, OH, United States)
Wongchotigul, K. (Howard University Washington, United States)
Date Acquired
August 15, 2013
Publication Date
September 1, 1992
Publication Information
Publication: Journal of Materials Science: Materials in Electronics
Volume: 3
Issue: 3 Se
ISSN: 0957-4522
Subject Category
Nonmetallic Materials
Accession Number
92A57027
Funding Number(s)
CONTRACT_GRANT: NSF RII-87-14676
CONTRACT_GRANT: NAG3-431
CONTRACT_GRANT: NSF RII-84-13805
Distribution Limits
Public
Copyright
Other

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