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Fast Overcurrent Tripping CircuitFast overcurrent tripping circuit designed for incorporation into power metal oxide/semiconductor field-effect transistor (MOSFET) switching circuit. Serves as fast electronic circuit breaker by sensing voltage across MOSFET's during conduction and switching MOSFET's off within 1 microsecond after voltage exceeds reference value corresponding to tripping current. Acts more quickly than Hall-effect current sensor and, in comparison with shunt current-measuring circuits, smaller and consumes less power. Also ignores initial transient overcurrents during first 5 microseconds of switching cycle.
Document ID
19930000066
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Sullender, Craig C. (Rockwell International Corp.)
Davies, Bryan L. (Rockwell International Corp.)
Osborn, Stephen H. (Rockwell International Corp.)
Date Acquired
August 16, 2013
Publication Date
February 1, 1993
Publication Information
Publication: NASA Tech Briefs
Volume: 17
Issue: 2
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
LEW-15022
Accession Number
93B10066
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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