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Energetic Atoms Would Etch Photoresists AnisotropicallyDirected beams of single oxygen atoms having kinetic energies between 1 and 5 eV used in anisotropic etching of oxygen-labile photoresist patterns on silicon wafers. Key step in manufacturing integrated circuits on semiconductor wafers. Damage to semiconductor material under photoresist layer reduced or eliminated. Method incorporated into lithographic processes for fabrication of integrated circuits.
Document ID
19930000107
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Koontz, Steven
(NASA Lyndon B. Johnson Space Center, Houston, TX.)
Cross, Jon
(Los Alamos National Lab.)
Date Acquired
August 16, 2013
Publication Date
February 1, 1993
Publication Information
Publication: NASA Tech Briefs
Volume: 17
Issue: 2
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
MSC-21631
Accession Number
93B10107
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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