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SRAM As An Array Of Energetic-Ion DetectorsStatic random-access memory (SRAM) designed for use as array of energetic-ion detectors. Exploits well-known tendency of incident energetic ions to cause bit flips in cells of electronic memories. Design of ion-detector SRAM involves modifications of standard SRAM design to increase sensitivity to ions. Device fabricated by use of conventional complementary metal oxide/semiconductor (CMOS) processes. Potential uses include gas densimetry, position sensing, and measurement of cosmic-ray spectrum.
Document ID
19930000373
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Buehler, Martin G.
(Caltech)
Blaes, Brent R.
(Caltech)
Lieneweg, Udo
(Caltech)
Nixon, Robert H.
(Caltech)
Date Acquired
August 16, 2013
Publication Date
July 1, 1993
Publication Information
Publication: NASA Tech Briefs
Volume: 17
Issue: 7
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-18322
Accession Number
93B10373
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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