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Improved Readout For Micromagnet/Hall-Effect MemoriesTwo improved readout circuits for micromagnet/Hall-effect random-access memories designed to eliminate current shunts introducing errors into outputs of older readout circuits. Incorporate additional switching transistors to isolate Hall sensors as needed.
Document ID
19930000541
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Wu, Jiin-Chuan
(Caltech)
Stadler, Henry L.
(Caltech)
Katti, Romney R.
(Caltech)
Date Acquired
August 16, 2013
Publication Date
September 1, 1993
Publication Information
Publication: NASA Tech Briefs
Volume: 17
Issue: 9
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-18627
Accession Number
93B10541
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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