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Silicon Holder For Molecular-Beam EpitaxySimple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.
Document ID
19930000603
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hoenk, Michael E.
(Caltech)
Grunthaner, Paula J.
(Caltech)
Grunthaner, Frank J.
(Caltech)
Date Acquired
August 16, 2013
Publication Date
September 1, 1993
Publication Information
Publication: NASA Tech Briefs
Volume: 17
Issue: 9
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-18687
Accession Number
93B10603
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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