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Hot Deformation Of Si(3)N(4) Doped With Sc(2)O(3)Report describes preparation, microstructural properties, and high-temperature deformation behavior of Si(3)N(4) doped with Sc(2)O(3). Powders of Si(3)N(4) with small additions of Sc(2)O(3) sintered under nitrogen overpressures to full density; expensive hot pressing or hot isostatic pressing not necessary to attain full density. Test of bars indicate high strengths at high temperatures and excellent time-dependent strength properties. Useful for fabrication of hot-section components of automotive gas-turbine engines.
Document ID
19930000610
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Cheong, Deock-Soo
(National Research Council)
Sanders, William A.
(NASA Lewis Research Center, Cleveland, OH.)
Date Acquired
August 16, 2013
Publication Date
September 1, 1993
Publication Information
Publication: NASA Tech Briefs
Volume: 17
Issue: 9
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
LEW-15301
Accession Number
93B10610
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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