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Photoluminescence structure, and composition of laterally anodized porous SiWe have studied the photoluminescence (PL), structure, and composition of laterally anodized porous Si. Broad PL peaks were observed centered between about 620-720 nm with strong intensities measured from 500 to 860 nm. Macroscopic variations in PL intensities and peak positions are explained in terms of the structure and anodization process. Structural studies suggest that the PL appears to originate from a multilayered porous Si structure in which the top two layers are amorphous. X-ray diffraction spectra also suggest the presence of a significant amorphous phase. In addition to high concentrations of B and N, we have measured extremely high concentrations much greater than 10 exp 20 cu cm of H, C, O, and F. Our results indicate that laterally anodized porous Si does not fit the crystalline Si quantum wire model prevalent in the literature suggesting that some other structure is responsible for the observed luminescence.
Document ID
19930033197
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Jung, K. H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Shih, S.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Kwong, D. L.
(Texas Univ. Austin, United States)
George, T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lin, T. L.
(JPL Pasadena, CA, United States)
Liu, H. Y.
(Texas Instruments, Inc. Dallas, United States)
Zavada, J.
(U.S. Army, Research Office, Research Triangle Park NC, United States)
Date Acquired
August 15, 2013
Publication Date
November 1, 1992
Publication Information
Publication: Electrochemical Society, Journal
Volume: 139
Issue: 11
ISSN: 0013-4651
Subject Category
Solid-State Physics
Accession Number
93A17194
Funding Number(s)
CONTRACT_GRANT: NSF CHE-89-20120
CONTRACT_GRANT: AF-AFOSR-91-0420
Distribution Limits
Public
Copyright
Other

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