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Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBa2Cu3O(7-x) thin filmsHigh quality YBa2Cu3O(7-x) films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd) (sub n), (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O(7-x) was formed in-situ at substrate temperature 680 C. The as-deposited films exhibited a mirror-like surface, had transition temperature T(sub cO) approximately equal to 89 K, Delta T(sub c) less than 1 K, and Jc (77 K) = 10(exp 6) A/sq cm.
Document ID
19930036646
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Zhang, Jiming
(NASA Lewis Research Center Cleveland, OH, United States)
Gardiner, Robin A.
(NASA Lewis Research Center Cleveland, OH, United States)
Kirlin, Peter S.
(NASA Lewis Research Center Cleveland, OH, United States)
Boerstler, Robert W.
(NASA Lewis Research Center Cleveland, OH, United States)
Steinbeck, John
(Advanced Technology Materials, Inc. Danbury, CT, United States)
Date Acquired
August 15, 2013
Publication Date
December 14, 1992
Publication Information
Publication: Applied Physics Letters
Volume: 61
Issue: 24
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
93A20643
Funding Number(s)
CONTRACT_GRANT: NAS3-25932
Distribution Limits
Public
Copyright
Other

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