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GaAs single-drift flat-profile IMPATT diodes for CW operation at D bandSingle-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140 GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks, and tested in a radial line full height waveguide cavity. An RF output power of 15 mW with a corresponding DC to RF conversion efficiency of 1.5 percent was obtained at 135.3 GHz.
Document ID
19930041325
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Eisele, H. (NASA Headquarters Washington, DC United States)
Haddad, G. I. (Michigan Univ. Ann Arbor, United States)
Date Acquired
August 16, 2013
Publication Date
November 5, 1992
Publication Information
Publication: Electronics Letters
Volume: 28
Issue: 23
ISSN: 0013-5194
Subject Category
Electronics And Electrical Engineering
Accession Number
93A25322
Funding Number(s)
CONTRACT_GRANT: NAGW-1334
Distribution Limits
Public
Copyright
Other

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