NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Near-equilibrium growth of thick, high quality beta-SiC by sublimationA close spaced near-equilibrium growth technique was used to produce thick, high quality epitaxial layers of beta-silicon carbide. The process utilized a sublimation method to grow morphologically smooth layers. The beta silicon carbide growth layers varied from about 200 to 750 microns in thickness. Chemical vapor deposition grown, 2-10 microns, beta silicon carbide films were used as seeds at 1860 and 1910 C growth temperatures. The respective average growth rates were 20 and 30 microns per hour. The layers are p-type with a 3.1 x 10 exp 17/cu cm carrier concentration. Electrical measurements indicate considerable improvement in the breakdown voltage of Schottky barriers on growth samples. Breakdown values ranged from 25 to 60 V. These measurements represent the highest values reported for 3C-SiC.
Document ID
19930052601
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Shields, Virgil B.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Fekade, Konjit
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Spencer, Michael G.
(Howard Univ. Washington, United States)
Date Acquired
August 16, 2013
Publication Date
April 19, 1993
Publication Information
Publication: Applied Physics Letters
Volume: 62
Issue: 16
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
93A36598
Funding Number(s)
CONTRACT_GRANT: NSF RII-87-14767
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available