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Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor depositionThis paper reports the fabrication and initial electrical characterization of greatly improved 3C-SiC (beta-SiC) p-n junction diodes. These diodes, which were grown on commercially available 6H-SiC substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.
Document ID
19930054997
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Neudeck, Philip G.
(NASA Lewis Research Center Cleveland, OH, United States)
Larkin, David J.
(NASA Lewis Research Center Cleveland, OH, United States)
Starr, Jonathan E.
(Ohio Aerospace Inst. Brook Park, United States)
Powell, J. A.
(NASA Lewis Research Center Cleveland, OH, United States)
Salupo, Carl S.
(Calspan Corp. Middleburg Heights, OH, United States)
Matus, Lawrence G.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 16, 2013
Publication Date
March 1, 1993
Publication Information
Publication: IEEE Electron Device Letters
Volume: 14
Issue: 3
ISSN: 0741-3106
Subject Category
Electronics And Electrical Engineering
Accession Number
93A38994
Distribution Limits
Public
Copyright
Other

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