CVD of SiC and AlN using cyclic organometallic precursorsThe use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.
Document ID
19930055528
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Interrante, L. V. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Larkin, D. J. (NASA Lewis Research Center Cleveland, OH, United States)
Amato, C. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1992
Publication Information
Publication: In: Chemical vapor deposition of refractory metals and ceramics II; Proceedings of the Symposium, Boston, MA, Dec. 4-6, 1991 (A93-39501 15-25)