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Photoluminescence intensity enhancement of GaAs by vapor-deposited GaS - A rational approach to surface passivationA two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster (/t-Bu/GaS)4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally-characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.
Document ID
19930056052
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Jenkins, Phillip P.
(Sverdrup Technology, Inc. Brook Park, OH, United States)
Hepp, Aloysius F.
(NASA Lewis Research Center Cleveland, OH, United States)
Power, Michael B.
(NASA Lewis Research Center Cleveland, OH; Harvard Univ., Cambridge, MA, United States)
Macinnes, Andrew N.
(Harvard Univ. Cambridge; Gallia, Inc., Weston, MA, United States)
Barron, Andrew R.
(Harvard Univ. Cambridge, MA, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1993
Publication Information
Publisher: Materials Research Society (MRS Symposium Proceedings, Vol. 282)
Subject Category
Solid-State Physics
Accession Number
93A40049
Distribution Limits
Public
Copyright
Other

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