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Development of a hydrogen gas sensor using microfabrication technologyMicrofabrication and micromachining technologies are used to produce a hydrogen gas sensor based on a palladium-silver film. The sensor uses a heater that is fabricated by diffusing p-type borones into the substrate, forming a resistance heater. A diode for temperature measurement is produced using p-type boron and n-type phosphor diffused into the substrate. A thickness of the palladium-silver film is approximately 300 arcsec. The hydrogen gas sensor employs the proven palladium-silver diode structure and is surrounded by a phosphor doped resistance heater which can be heated up to a temperature of 250 C. Experimental results show that the sensor is capable of operating over a wide range of hydrogen concentration levels between 0-95 percent without any hysteresis effects.
Document ID
19930057359
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Liu, Chung-Chiun
(NASA Lewis Research Center Cleveland, OH, United States)
Wu, Qinghai
(NASA Lewis Research Center Cleveland, OH, United States)
Stuczynski, Matthew
(Case Western Reserve Univ. Cleveland, OH, United States)
Madzsar, George C.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 16, 2013
Publication Date
July 1, 1992
Subject Category
Instrumentation And Photography
Report/Patent Number
SAE PAPER 921176
Meeting Information
Meeting: SAE, International Conference on Environmental Systems
Location: Seattle, WA
Country: United States
Start Date: July 13, 1992
End Date: July 16, 1992
Sponsors: SAE
Accession Number
93A41356
Funding Number(s)
CONTRACT_GRANT: NAG3-1149
Distribution Limits
Public
Copyright
Other

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