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Characterization of Si3N4/SiO2 optical channel waveguides by photon scanning tunneling microscopyPhoton scanning tunneling microscopy (PSTM) is used to characterize Si3N4/Si02 optical channel waveguides being used for integrated optical-micromechanical sensors. PSTM utilizes an optical fiber tapered to a fine point which is piezoelectrically positioned to measure the decay of the evanescent field intensity associated with the waveguide propagating mode. Evanescent field decays are recorded for both ridge channel waveguides and planar waveguide regions. Values for the local effective refractive index are calculated from the data for both polarizations and compared to model calculations.
Document ID
19930065461
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Wang, Yan
(NASA Headquarters Washington, DC United States)
Chudgar, Mona H.
(NASA Headquarters Washington, DC United States)
Jackson, Howard E.
(NASA Headquarters Washington, DC United States)
Miller, Jeffrey S.
(NASA Headquarters Washington, DC United States)
De Brabander, Gregory N.
(NASA Headquarters Washington, DC United States)
Boyd, Joseph T.
(Cincinnati Univ. OH, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1993
Publication Information
Publication: In: Integrated optics and microstructures; Proceedings of the Meeting, Boston, MA, Sept. 8, 9, 1992 (A93-49456 21-35)
Publisher: Society of Photo-Optical Instrumentation Engineers
Subject Category
Instrumentation And Photography
Accession Number
93A49458
Funding Number(s)
CONTRACT_GRANT: NAGW-1407
CONTRACT_GRANT: NAG3-852
Distribution Limits
Public
Copyright
Other

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