Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992The present volume on IR readout electronics discusses cryogenic readout using silicon devices, cryogenic readout using III-V and LTS devices, multiplexers for higher temperatures, and focal-plane signal processing electronics. Attention is given to the optimization of cryogenic CMOS processes for sub-10-K applications, cryogenic measurements of aerojet GaAs n-JFETs, inP-based heterostructure device technology for ultracold readout applications, and a three-terminal semiconductor-superconductor transimpedance amplifier. Topics addressed include unfulfilled needs in IR astronomy focal-plane readout electronics, IR readout integrated circuit technology for tactical missile systems, and radiation-hardened 10-bit A/D for FPA signal processing. Also discussed are the implementation of a noise reduction circuit for spaceflight IR spectrometers, a real-time processor for staring receivers, and a fiber-optic link design for INMOS transputers.
Document ID
19930069079
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Fossum, Eric R. (JPL Pasadena, CA, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1992
Publication Information
Publisher: Society of Photo-Optical Instrumentation Engineers (SPIE Proceedings. Vol. 1684)
ISBN: 0-8194-0849-2
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
SPIE-1684
Accession Number
93A53076
Distribution Limits
Public
Copyright
Other
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