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Nonvolatile GaAs Random-Access MemoryProposed random-access integrated-circuit electronic memory offers nonvolatile magnetic storage. Bits stored magnetically and read out with Hall-effect sensors. Advantages include short reading and writing times and high degree of immunity to both single-event upsets and permanent damage by ionizing radiation. Use of same basic material for both transistors and sensors simplifies fabrication process, with consequent benefits in increased yield and reduced cost.
Document ID
19940000135
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Katti, Romney R.
(Caltech)
Stadler, Henry L.
(Caltech)
Wu, Jiin-Chuan
(Caltech)
Date Acquired
August 16, 2013
Publication Date
March 1, 1994
Publication Information
Publication: NASA Tech Briefs
Volume: 18
Issue: 3
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-18529
Accession Number
94B10135
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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