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Partial-Thickness Grooves In A VBL Memory DeviceBias magnetic fields tailored to match those needed elsewhere in device. Grooves through part of thickness of magnetic garnet storage layer of vertical-Bloch-line (VBL) memory device used to confine magnetic bubble and stripe domains in desired storage areas. VBL-memory concept described in "Vertical-Bloch-Line Memory" (NPO-18467).
Document ID
19940000244
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Katti, Romney R. (Caltech)
Wu, Jiin-Chuan (Caltech)
Stadler, Henry L. (Caltech)
Date Acquired
August 16, 2013
Publication Date
May 1, 1994
Publication Information
Publication: NASA Tech Briefs
Volume: 18
Issue: 5
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-18749
Accession Number
94B10244
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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