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Three-Dimensional Vertical-Bloch-Line Memory SystemIn proposed magnetic memory system without moving parts, data is stored in stack of two-dimensional vertical-Bloch-line (VBL) memory chips or modules. System similar to one described in "Three-Dimensional Magnetic-Bubble Memory System" (NPO-18533). Each VBL module in this memory system silimar to module described in "Vertical-Bloch-Line Memory" (NPO-18467). Advantages include high storage density, high speed, nonvolatility, and insensitivity to ionizing radiation.
Document ID
19940000367
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Katti, Romney R.
(Caltech)
Wu, Jiin-Chuan
(Caltech)
Stadler, Henry L.
(Caltech)
Date Acquired
August 16, 2013
Publication Date
July 1, 1994
Publication Information
Publication: NASA Tech Briefs
Volume: 18
Issue: 7
ISSN: 0145-319X
Subject Category
Electronic Systems
Report/Patent Number
NPO-18867
Accession Number
94B10367
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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