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Cubic GaS: A Surface Passivator For GaAsThin films of cubic form of gallium sulfide (GaS) formed on surfaces of gallium arsenide (GaAs) substrates via metal/organic chemical vapor deposition (MOCVD). Deposited cubic GaS, crystalline lattice matched to substrate GaAs, neutralizes electrically active defects on surfaces of both n-doped and p-doped GaAs. Enabling important GaAs-based semiconducting materials to serve as substrates for metal/insulator/semiconductor (MIS) capacitors. Cubic GaS enables fabrication of ZnSe-based blue lasers and light-emitting diodes. Because GaS is optically transparent, deposited to form window layers for such optoelectronic devices as light-emitting diodes, solar optical cells, and semiconductor lasers. Its transparency makes it useful as interconnection material in optoelectronic integrated circuits. Also useful in peeled-film technology because selectively etched from GaAs.
Document ID
19940000601
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hepp, Aloysius F.
(NASA Lewis Research Center, Cleveland, OH.)
Barron, Andrew R.
(Harvard Univ.)
Power, Michael B.
(Harvard Univ.)
Jenkins, Phillip P.
(Sverdrup Technology, Inc.)
Macinnes, Andrew N.
(Gallia, Inc.)
Date Acquired
August 16, 2013
Publication Date
October 1, 1994
Publication Information
Publication: Laser Tech. Brief.
Volume: 2
Issue: 4
Subject Category
Materials
Report/Patent Number
LEW-15775
Accession Number
94B10601
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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