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Integrated CMOS RF amplifierThis paper reports an integrated 2.0 micron CMOS RF amplifier designed for amplification in the 420-450 MHz frequency band. Design techniques are shown for the test amplifier configuration. Problems of decreased amplifier bandwidth, gain element instability, and low Q values for the inductors were encountered. Techniques used to overcome these problems are discussed. Layouts of the various elements are described and a summary of the simulation results are included. Test circuits have been submitted to MOSIS for fabrication.
Document ID
19940004327
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Charity, C. (Hewlett-Packard Co. Boise, ID., United States)
Whitaker, S. (Idaho Univ. Moscow, ID, United States)
Purviance, J. (Idaho Univ. Moscow, ID, United States)
Canaris, M. (Idaho Univ. Moscow, ID, United States)
Date Acquired
August 16, 2013
Publication Date
January 24, 1990
Publication Information
Publication: The First NASA Symposium on VLSI Design
Subject Category
Electronics And Electrical Engineering
Accession Number
94N71082
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19940004319Collected WorksNASA SERC 1990 Symposium on VLSI Design
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