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Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursorsThin homoepitaxial films of gallium phosphide (GaP) were grown by remote plasma enhanced chemical vapor deposition utilizing in situ generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (rf) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate, however, the saturation of the growth rate at even higher rf power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.
Document ID
19940006968
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Choi, S. W.
(North Carolina State Univ. Raleigh, NC, United States)
Lucovsky, G.
(North Carolina State Univ. Raleigh, NC, United States)
Bachmann, Klaus J.
(North Carolina State Univ. Raleigh, NC, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1993
Publication Information
Publication: Memory Effects in the Organometallic Chemical Beam Epitaxy of Compound Semiconductors
Subject Category
Solid-State Physics
Accession Number
94N11440
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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