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Photoconductive and photovoltaic response of high-dark-resistivity 6H-SiC devicesThe optoelectronic properties of high-resistivity p-type hexagonal silicon carbide (6H-SiC) have been investigated using lateral photoconductive switches. Both photovoltaic and photoconductive effects are reported, measured at 337 nm, which is above the 6H-SiC absorption edge. These photoconductive switches have been fabricated with dark resistances of up to 1 M omega; photoconductive switching efficiencies of more than 80% have been achieved. In addition, these devices displayed a high-speed photovoltaic response to nanosecond laser excitations in the ultraviolet spectral region; in particular, the observed photovoltaic response pulse width can be shorter than the exciting laser pulse width. This subnanosecond photovoltaic response has been modeled and good qualitative agreement with experiment has been obtained.
Document ID
19950041345
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Cho, Pak S.
(Univ. of Maryland, College Park, MD United States)
Goldhar, Julius
(Univ. of Maryland, College Park, MD United States)
Lee, Chi H.
(Univ. of Maryland, College Park, MD United States)
Saddow, Stephen E.
(Army Research Lab. Adelphi, MD, United States)
Neudeck, Philip
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 16, 2013
Publication Date
February 15, 1995
Publication Information
Publication: Journal of Applied Physics
Volume: 77
Issue: 4
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
95A72944
Distribution Limits
Public
Copyright
Other

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