Magnetic flux relaxation in YBa2Cu3)(7-x) thin film: Thermal or athermalThe magnetic flux relaxation behavior of YBa2Cu3O(7-x) thin film on LaAlO3 for H is parallel to c was studied in the range 4.2 - 40 K and 0.2 - 1.0 T. Both the normalized flux relaxation rate S and the net flux pinning energy U increase continuously from 1.3 x 10(exp -2) to 3.0 x 10(exp -2) and from 70 to 240 meV respectively, as the temperature T increases from 10 to 40 K. This behavior is consistent with the thermally activated flux motion model. At low temperatures, however, S is found to decrease much more slowly as compared with kT, in contradiction to the thermal activation model. This behavior is discussed in terms of the athermal quantum tunneling of flux lines. The magnetic field dependence of U, however, is not completely understood.
Document ID
19950047777
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Vitta, Satish (NASA Lewis Research Center Cleveland, OH, US, United States)
Stan, M. A. (Kent State Univ. Kent, OH, US, United States)
Warner, J. D. (NASA Lewis Research Center Cleveland, OH, US, United States)
Alterovitz, S. A. (NASA Lewis Research Center Cleveland, OH, US, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1991
Publication Information
Publisher: Elsevier Sequoia S.A.
Subject Category
Solid-State Physics
Accession Number
95A79376
Funding Number(s)
CONTRACT_GRANT: NAG3-440751
Distribution Limits
Public
Copyright
Other
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Related Records
IDRelationTitle19950047657Collected WorksMetallurgical coatings and thin films; Proceedings of the International Conference, 18th, San Diego, CA, Apr. 22-26, 1991. Vols. 1 & 2