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Controlled Thin-Film Growth Of Silicon Carbide PolytypesImproved deposition process to grows thin layers of silicon carbide having chosen crystalline structures. Process incorporated into sequences of deposition and etching steps used to fabricate silicon-carbide-based semiconductor devices. Important advance because silicon carbide emerging as superior semiconductor for devices operating under conditions of high power, high temperature, and/or high frequency. Furthermore, various crystalline structures of SiC have different electronic properties, each suited to specific application.
Document ID
19950065376
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Powell, J. Anthony
(NASA Lewis Research Center, Cleveland, OH.)
Larkin, David J.
(NASA Lewis Research Center, Cleveland, OH.)
Date Acquired
August 17, 2013
Publication Date
May 1, 1995
Publication Information
Publication: NASA Tech Briefs
Volume: 19
Issue: 5
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
LEW-15222
Accession Number
95B10217
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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