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Developing Low-Noise GaAs JFETs For Cryogenic OperationReport discusses aspects of effort to develop low-noise, low-gate-leakage gallium arsenide-based junction field-effect transistors (JFETs) for operation at temperature of about 4 K as readout amplifiers and multiplexing devices for infrared-imaging devices. Transistors needed to replace silicon transistors, relatively noisy at 4 K. Report briefly discusses basic physical principles of JFETs and describes continuing process of optimization of designs of GaAs JFETs for cryogenic operation.
Document ID
19950065634
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Cunningham, Thomas J.
(Caltech)
Date Acquired
August 17, 2013
Publication Date
September 1, 1995
Publication Information
Publication: NASA Tech Briefs
Volume: 19
Issue: 9
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-19417
Accession Number
95B10475
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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