High efficient radiation stable AlGaAs/GaAs solar cells with internal Bragg reflector

An investigation of solar cells based on AlGaAs/GaAs heterostructures with an internal Bragg reflector as the back-surface reflector is presented. The Bragg reflector is grown by low pressure metalorganic chemical vapor deposition on n-GaAs substrates in a horizontal resistively heated reactor. The Bragg reflector with its maximum reflectance centered at a wavelength of 860 nm consists of 12 pairs of AlAs/GaAs layers. The resulting Bragg reflector has a thickness of 0.072 micrometers for AlAs and 0.059 micrometers for GaAs. The multi-layered quasi-dielectric stack selectively reflects weakly absorbed photons with energies near to the GaAs band gap for a second pass through the photoactive region, thus increasing the photocurrent. The use of the Bragg reflector allows the external quantum efficiency to be increased in the long wavelength of the spectrum. The use of the Bragg reflector and an antireflective coating and prismatic cover allowed an efficiency of 23.4 percent to be obtained.